SI4134DY-T1-GE3
| Part No | SI4134DY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 14A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
37743
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7296 | |
| 10 | 0.715 | |
| 100 | 0.6931 | |
| 1000 | 0.6712 | |
| 10000 | 0.642 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.5 mm |
| Length | 5 mm |
| Weight | 186.993455 mg |
| Fall Time | 10 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 12 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 540 mΩ |
| Resistance | 14 MΩ |
| Schedule B | 8541290080 |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 180 pF |
| Power Dissipation | 5 W |
| Threshold Voltage | 1.8 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14 ns |
| Element Configuration | Single |
| Max Power Dissipation | 2.5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 14 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 9.9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
