SI6435ADQ-T1-E3
| Part No | SI6435ADQ-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 4.7A 8-TSSOP |
| Datasheet | Download Datasheet |
| ECAD Module |
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Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 3.0988 mm |
| Height | 1.0414 mm |
| Length | 4.4958 mm |
| Fall Time | 10 ns |
| Lead Free | Lead Free |
| Rise Time | 10 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 30 mΩ |
| Resistance | 30 mΩ |
| Nominal Vgs | -1 V |
| Termination | SMD/SMT |
| Case/Package | TSSOP |
| Number of Pins | 8 |
| Power Dissipation | 1.05 W |
| Threshold Voltage | -1 V |
| Number of Elements | 1 |
| Turn-On Delay Time | 12 ns |
| Dual Supply Voltage | -30 V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 30 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 4.7 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | -30 V |
