SI7139DP-T1-GE3
| Part No | SI7139DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 40A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
15595
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2516 | |
| 10 | 1.2266 | |
| 100 | 1.189 | |
| 1000 | 1.1515 | |
| 10000 | 1.1014 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Height | 1.17 mm |
| Weight | 506.605978 mg |
| Lead Free | Lead Free |
| REACH SVHC | Unknown |
| Rds On Max | 5.5 mΩ |
| Resistance | 5.5 mΩ |
| Schedule B | 8541290080 |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 4.23 nF |
| Power Dissipation | 5 W |
| Threshold Voltage | -1.2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 17 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 56 ns |
| Element Configuration | Single |
| Max Power Dissipation | 48 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 4.2 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | -40 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -30 V |
| Manufacturer Package Identifier | S17-0173-Single |
| Drain to Source Breakdown Voltage | -30 V |
