SI7617DN-T1-GE3
| Part No | SI7617DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 35A 1212-8 PPAK |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
27006
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8585 | |
| 10 | 0.8413 | |
| 100 | 0.8156 | |
| 1000 | 0.7898 | |
| 10000 | 0.7555 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Height | 1.12 mm |
| Fall Time | 11 ns |
| Lead Free | Lead Free |
| Rise Time | 43 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 12.3 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Input Capacitance | 1.8 nF |
| Power Dissipation | 3.7 W |
| Threshold Voltage | -2.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30 ns |
| Element Configuration | Single |
| Max Power Dissipation | 52 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 10.3 mΩ |
| Gate to Source Voltage (Vgs) | 25 V |
| Continuous Drain Current (ID) | -35 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -30 V |
| Drain to Source Breakdown Voltage | -30 V |
