SIA433EDJ-T1-GE3
| Part No | SIA433EDJ-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V 12A SC-70-6 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
15424
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5916 | |
| 10 | 0.5798 | |
| 100 | 0.562 | |
| 1000 | 0.5443 | |
| 10000 | 0.5206 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 2.05 mm |
| Height | 750 µm |
| Length | 2.05 mm |
| Fall Time | 3.2 µs |
| Lead Free | Lead Free |
| Rise Time | 1.7 µs |
| REACH SVHC | Unknown |
| Rds On Max | 18 mΩ |
| Resistance | 15 mΩ |
| Schedule B | 8541290080 |
| Number of Pins | 6 |
| Power Dissipation | 3.5 W |
| Threshold Voltage | -500 mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 710 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 6 µs |
| Element Configuration | Single |
| Max Power Dissipation | 19 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 18 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Continuous Drain Current (ID) | -12 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Breakdown Voltage | -20 V |
