SIR850DP-T1-GE3
| Part No | SIR850DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 25V 30A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 5.89 mm |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Weight | 506.605978 mg |
| Fall Time | 11 ns |
| Rise Time | 20 ns |
| REACH SVHC | Unknown |
| Rds On Max | 7 mΩ |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Input Capacitance | 1.12 nF |
| Power Dissipation | 4.8 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 30 ns |
| Element Configuration | Single |
| Max Power Dissipation | 41.7 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 7.3 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 30 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drain to Source Breakdown Voltage | 25 V |
