SIR880ADP-T1-GE3
| Part No | SIR880ADP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 80V 60A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
16829
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.8079 | |
| 10 | 1.7717 | |
| 100 | 1.7175 | |
| 1000 | 1.6633 | |
| 10000 | 1.591 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Weight | 506.605978 mg |
| Lead Free | Lead Free |
| Packaging | Digi-Reel® |
| REACH SVHC | Unknown |
| Rds On Max | 6.3 mΩ |
| Resistance | 8.9 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Input Capacitance | 2.289 nF |
| Power Dissipation | 5.4 W |
| Threshold Voltage | 1.5 V |
| Number of Channels | 2 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Element Configuration | Dual |
| Max Power Dissipation | 83 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 6.3 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 60 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drain to Source Breakdown Voltage | 80 V |
