SIS862DN-T1-GE3
| Part No | SIS862DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 60V 40A 1212 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
16149
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1536 | |
| 10 | 1.1305 | |
| 100 | 1.0959 | |
| 1000 | 1.0613 | |
| 10000 | 1.0152 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Height | 1.12 mm |
| Fall Time | 5 ns |
| Lead Free | Lead Free |
| Rise Time | 5 ns |
| REACH SVHC | Unknown |
| Rds On Max | 8.5 mΩ |
| Schedule B | 8541290080 |
| Number of Pins | 8 |
| Input Capacitance | 1.32 nF |
| Power Dissipation | 52 W |
| Threshold Voltage | 2.6 V |
| Number of Channels | 1 |
| Turn-On Delay Time | 12 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Max Power Dissipation | 52 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 7 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 40 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Breakdown Voltage | 60 V |
