TP2435N8-G
RoHS

TP2435N8-G

TP2435N8-G

Microchip

MOSFET P-CH 350V 0.231A SOT89-3

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TP2435N8-G

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Specifications
RoHSCompliant
MountSurface Mount
Width2.6 mm
Height1.6 mm
Length4.6 mm
Weight52.786812 mg
Fall Time20 ns
Rise Time20 ns
Rds On Max15 Ω
Case/PackageSOT-89-3
Number of Pins4
Lifecycle StatusProduction (Last Updated: 2 years ago)
Input Capacitance200 pF
Power Dissipation1.6 W
Number of Channels1
Turn-On Delay Time15 ns
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Max Power Dissipation1.6 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance15 Ω
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-231 mA
Drain to Source Voltage (Vdss)350 V
Drain to Source Breakdown Voltage-350 V