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Availability:
10673
pieces
Specifications
| Mfr | NXP USA Inc. |
|---|---|
| Series | - |
| Package | Tape & Box (TB) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25u00b0C | 310mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.4V, 10V |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 300mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Vgs (Max) | u00b120V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | -55u00b0C ~ 150u00b0C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Base Product Number | BSN2 |
