
Availability:
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Specifications
Collector-Emitter Breakdown Voltage (Vceo) | 60V |
---|---|
Power Dissipation (Pd) | 750mW |
Collector Current (Ic) | 1A |
DC Current Gain (hFE@Ic,Vce) | 200@100mA,2V |
Transition Frequency (fT) | 160MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 150mV@1A,50mA |
Transistor Type | NPN |
Operating Temperature | +150u2103@(Tj) |